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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
BD135 BD137 BD139
Absolute maximum ratings (Ta=25ae )
SYMBOL
VCBO
Collector-base voltage

PARAMETER
CONDITIONS
BD135 BD137 Open emitter
BD139
VCEO
VEBO IC ICM IBM Pt Tj Tstg Tamb
HAN INC
Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature
BD135 BD137
BD139
GE S
Open base
EMIC
OND
TOR UC
VALUE 45 60 100 45 60 100 5 1.5 2 1
UNIT
V
V
Open collector
V A A A W ae ae ae
TmbU
70ae
8 150 -65~150 -65~150
Operating ambient temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS
BD135 BD137 BD139
SYMBOL
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
0.5
V
VBE
Base-emitter voltage
IC=500mA ; VCE=2V VCB=30V; IE=0
1.0
V
100
nA
ICBO
Collector cut-off current VCB=30V; IE=0 Tj=125ae 10 |I A
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
nA
hFE-1
DC current gain DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16
IC=5mA ; VCE=2V
40 63 63 100 25 250 160 250
hFE-2
hFE-3 fT
DC current gain
Transition frequency

IC=150mA ; VCE=2V
IC=500mA ; VCE=2V IC=50mA; VCE=5V ;f=100MHz
IN
ANG CH
EMIC ES
OND
TOR UC
190
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD135 BD137 BD139
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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